0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features collector current: i c =1.5a absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v collector current -continuous i c 1.5 a collector dissipation p c 0.3 w junction temperature t j 150 storage temperature t stg -55to150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = 100 a , i e =0 40 v collector-emitter breakdown voltage v ceo i c =1ma,i b =0 25 v emitter-base breakdown voltage v ebo i e = 100 a , i c =0 5 v collector-base cut-off current i cbo v cb =40v,i e =0 0.1 a collector-emitter cut-off current i ceo v ce =20v,i b =0 0.1 a emitter-base cut-off current i ebo v eb =5v,i c =0 0.1 a v ce =1v,i c = 100 ma 120 400 v ce =1v,i c = 800 ma 40 collector-emitter saturation voltage v ce(sat) i c = 800 ma , i b =80ma 0.5 v base-emitter saturation voltage v be(sat) i c = 800 ma , i b =80ma 1.2 v transition frequency f t v ce =10v,i c = 50 ma , f = 30 mhz 100 mhz dc current gain h fe h fe classification marking rank l h j hfe 120 200 200 350 300 400 y1 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors KST8050 smd type transistors smd type transistors transistors smd type s m d ty p e t r a n s i s t o r smd t ype t product specification 4008-318-123
smd type transistors KST8050 typical characteristics fig.1 static characteristic fig.2 dc current gain fig.3 base emitter on voltage fig.4 base emitter saturation voltage collector emitter saturation voltage fig.5 current gain bandwidth product fig.6 colletor output capacitance sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors transistors smd type s m d ty p e t r a n s i s t o r smd t ype t product specification 4008-318-123
|
